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Atomic concentrations at different <t>sputtering</t> times in XPS depth profiling of the topmost Nb 2 O 5 –SiO 2 layers in sample 3.
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Atomic concentrations at different sputtering times in XPS depth profiling of the topmost Nb 2 O 5 –SiO 2 layers in sample 3.

Journal: Heliyon

Article Title: Highly reflective silver mirror enhanced by several dielectric films prepared under the low substrate temperature

doi: 10.1016/j.heliyon.2024.e35507

Figure Lengend Snippet: Atomic concentrations at different sputtering times in XPS depth profiling of the topmost Nb 2 O 5 –SiO 2 layers in sample 3.

Article Snippet: For XPS depth profiling, the Versa Probe III was equipped with Ar ion-beam sputtering tools (ULVAC-PHI, Kanagawa, Japan).

Techniques:

Atomic concentrations at different sputtering times in XPS depth profiling of sample 4.

Journal: Heliyon

Article Title: Highly reflective silver mirror enhanced by several dielectric films prepared under the low substrate temperature

doi: 10.1016/j.heliyon.2024.e35507

Figure Lengend Snippet: Atomic concentrations at different sputtering times in XPS depth profiling of sample 4.

Article Snippet: For XPS depth profiling, the Versa Probe III was equipped with Ar ion-beam sputtering tools (ULVAC-PHI, Kanagawa, Japan).

Techniques: